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  this is information on a product in full production. october 2012 doc id 15868 rev 4 1/21 21 stb18nm60n, stf18nm60n, STP18NM60N, stw18nm60n n-channel 600 v, 0.26 typ., 13 a mdmesh? ii power mosfet in d 2 pak, to-220fp, to-220 and to-247 datasheet ? production data features 100% avalanche tested low input capacitance and gate charge low gate input resistance applications switching applications description these devices are n-channel power mosfets developed using the second generation of mdmesh? technology. this revolutionary power mosfet associates a vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. figure 1. internal schematic diagram order codes v dss (@tjmax) r ds(on) max. i d p tot stb18nm60n 650 v < 0.285 13 a 110 w stf18nm60n 30 w STP18NM60N 110 stw18nm60n to-220 to-220fp 1 2 3 to-247 1 2 3 d2pak 1 3 tab 1 2 3 tab !-v $ 4!" ' 3 table 1. device summary order codes marking package packaging stb18nm60n 18nm60n d2pak tape and reel stf18nm60n 18nm60n to-220fp tube STP18NM60N 18nm60n to-220 tube stw18nm60n 18nm60n to-247 tube www.st.com
contents stb18nm60n, stf18nm60n, STP18NM60N, stw18nm60n 2/21 doc id 15868 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
stb18nm60n, stf18nm60n, STP18NM60N, stw18nm60n electrical ratings doc id 15868 rev 4 3/21 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit d2pak, to-220,to-247 to-220fp v ds drain-source voltage 600 v v gs gate- source voltage 25 i d drain current (continuous) at t c = 25 c 13 13 (1) 1. limited by maximum junction temperature. a i d drain current (continuous) at t c = 100 c 8.2 8.2 (1) a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 52 52 (1) a p tot total dissipation at t c = 25 c 110 30 w i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 4.5 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 350 mj dv/dt (3) 3. i sd 13 a, di/dt 400 a/s, v dd 80 % v (br)dss , v ds(peak) v (br)dss peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter d2pak to-220 to-247 to-220fp unit r thj-case thermal resistance junction-case max 1.14 4.17 c/w r thj-amb thermal resistance junction-amb max 62.5 50 62.5 r thj-pcb (1) 1. when mounted on 1inch2 fr-4 board, 2 oz cu. thermal resistance junction-pcb max 30
electrical characteristics stb18nm60n, stf18nm60n, STP18NM60N, stw18nm60n 4/21 doc id 15868 rev 4 2 electrical characteristics (t case =25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v v ds = 600 v, t j =125 c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on- resistance v gs = 10 v, i d =6.5 a 0.260 0.285 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f =1 mhz, v gs = 0 - 1000 60 3 - pf pf pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v ds . output equivalent capacitance v ds = 0, to 480 v, v gs =0 - 225 - pf r g intrinsic resistance f=1 mhz open drain - 3.5 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v, i d = 13 a v gs = 10 v (see figure 19 ) - 35 6 20 - nc nc nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f tu r n - o n d e l ay t i m e rise time turn-off delay time fall time v dd = 300 v, i d = 6.5 a, r g = 4.7 , v gs = 10 v (see figure 18 ) - 12 15 55 25 - ns ns ns ns
stb18nm60n, stf18nm60n, STP18NM60N, stw18nm60n electrical characteristics doc id 15868 rev 4 5/21 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 13 52 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 13 a, v gs =0 - 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =13 a, di/dt =100 a/s, v dd = 60 v (see figure 20 ) - 300 4.0 25 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current v dd = 60 v di/dt =100 a/s, i sd = 13 a tj = 150c (see figure 20 ) - 360 4.5 25 ns c a
electrical characteristics stb18nm60n, stf18nm60n, STP18NM60N, stw18nm60n 6/21 doc id 15868 rev 4 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220 and d2pak figure 3. thermal impedance for to-220 and d2pak figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e am05525v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e 0.01 am05526v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e am05527v1
stb18nm60n, stf18nm60n, STP18NM60N, stw18nm60n electrical characteristics doc id 15868 rev 4 7/21 figure 8. output characteristics figure 9. transfer characteristics figure 10. static drain-source on resistance figure 11. gate charge vs gate-source voltage figure 12. capacitance variations figure 13. output capacitance stored energy i d 12 8 4 0 0 8 v d s (v) 16 (a) 412 16 24 5v 6v 4v v g s =10v 7v 20 20 am0552 8 v1 i d 0 0 v g s (v) (a) v d s =19v 12 8 4 16 24 20 4 8 26 10 am05529v1 r d s (on) 0.2 3 0.22 0.21 0.20 0 4 i d (a) ( ) 2 6 0.24 0.25 0.26 0.27 8 10 12 0.2 8 v g s = 10 v am055 3 0v1 v g s 6 4 2 0 0 10 q g (nc) (v) 40 8 20 3 0 10 v dd =4 8 0v i d =1 3 a 12 3 00 200 100 0 400 500 v d s v d s (v) am055 3 1v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am055 3 2v1 e o ss 3 2 1 0 0 100 v d s (v) ( j) 400 4 200 3 00 5 6 500 600 7 am055 33 v1
electrical characteristics stb18nm60n, stf18nm60n, STP18NM60N, stw18nm60n 8/21 doc id 15868 rev 4 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on resistance vs temperature figure 16. normalized b vdss vs temperature figure 17. source-drain diode forward vs temperature v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d = 250 a am055 3 4v1 r d s (on) 1.9 1.1 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.7 1.5 1. 3 2.1 v g s = 10 v am055 3 5v1 v d s -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.9 8 1.00 1.02 1.04 1.06 i d =1ma 1.0 8 1.10 am0902 8 v1 t j =-50c t j =150c t j =25c v s d 0 4 i s d (a) (v) 2 10 6 8 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 12 0 am1476 8 v1
stb18nm60n, stf18nm60n, STP18NM60N, stw18nm60n test circuits doc id 15868 rev 4 9/21 3 test circuits figure 18. switching times test circuit for resistive load figure 19. gate charge test circuit figure 20. test circuit for inductive load switching and diode recovery times figure 21. unclamped inductive load test circuit figure 22. unclamped inductive waveform figure 23. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data stb18nm60n, stf18nm60n, STP18NM60N, stw18nm60n 10/21 doc id 15868 rev 4 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 8. d2pak (to-263) mechanical data dim. mm min. typ. max. a 4.40 4.60 a1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 d 8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l 2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
stb18nm60n, stf18nm60n, STP18NM60N, stw18nm60n package mechanical data doc id 15868 rev 4 11/21 figure 24. d2pak (to-263) drawing figure 25. d2pak footprint (a) a. all dimension are in millimeters 0079457_t 16.90 12.20 9.75 3 .50 5.0 8 1.60 footprint
package mechanical data stb18nm60n, stf18nm60n, STP18NM60N, stw18nm60n 12/21 doc id 15868 rev 4 table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
stb18nm60n, stf18nm60n, STP18NM60N, stw18nm60n package mechanical data doc id 15868 rev 4 13/21 figure 26. to-220fp drawing 7012510_rev_k_b
package mechanical data stb18nm60n, stf18nm60n, STP18NM60N, stw18nm60n 14/21 doc id 15868 rev 4 table 10. to-220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p 3.75 3.85 q 2.65 2.95
stb18nm60n, stf18nm60n, STP18NM60N, stw18nm60n package mechanical data doc id 15868 rev 4 15/21 figure 27. to-220 type a drawing 00159 88 _typea_rev_ s
package mechanical data stb18nm60n, stf18nm60n, STP18NM60N, stw18nm60n 16/21 doc id 15868 rev 4 table 11. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
stb18nm60n, stf18nm60n, STP18NM60N, stw18nm60n package mechanical data doc id 15868 rev 4 17/21 figure 28. to-247 drawing 0075 3 25_g
packaging mechanical data stb18nm60n, stf18nm60n, STP18NM60N, stw18nm60n 18/21 doc id 15868 rev 4 5 packaging mechanical data table 12. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
stb18nm60n, stf18nm60n, STP18NM60N, stw18nm60n packaging mechanical data doc id 15868 rev 4 19/21 figure 29. tape figure 30. reel p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us top cover t a pe am0 88 52v2 a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
revision history stb18nm60n, stf18nm60n, STP18NM60N, stw18nm60n 20/21 doc id 15868 rev 4 6 revision history table 13. document revision history date revision changes 15-jun-2009 1 first release 11-nov-2009 2 ? added r ds(on) typical value ? added new package, mechanical data: i2pak ? document status promoted from preliminary data to datasheet 06-oct-2010 3 inserted new value in ta bl e 5 . 01-oct-2012 4 updated title and description on the cover page. updated figures 10 , 11 , 14 , 15 and 16 . updated section 4: package mechanical data and section 5: packaging mechanical data .
stb18nm60n, stf18nm60n, STP18NM60N, stw18nm60n doc id 15868 rev 4 21/21 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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